Journal
ISCIENCE
Volume 25, Issue 9, Pages -Publisher
CELL PRESS
DOI: 10.1016/j.isci.2022.104950
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Funding
- U.S. Department of Energy (DOE) [DE-AC36-08GO28308]
- U.S. Department of Energy Office of Energy Efficiency and Renewable Energy Solar Energy Technologies Office [DE-00034911]
- German Federal Ministry for Economic Affairs and Energy [FKZ:03EE1056A]
- German State of Lower Saxony
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This study analyzes the performance of two superstrate 3T III-V-on-Si tandem solar cells and demonstrates that both cells exhibit the same efficiency, showing that the third terminal allows for flexibility in the selection of the top cell material, similar to the 4T design.
The pursuit of ever-higher solar cell efficiencies has focused heavily on multijunction technologies. In tandem cells, subcells are typically either contacted via two terminals (2T) or four terminals (4T). Simulations show that the less-common three-terminal (3T) design may be comparable to 4T tandem cells in its compatibility with a range of materials, operating conditions, and methods for subcell integration, yet the 3T design circumvents shading losses of the 4T intermediate conductive layers. This study analyzes the performance of two superstrate 3T III-V-on-Si (III-V//Si) tandem cells: One has slightly greater current contribution from the Si bottom cell (GaInP//Si) and the other has substantially greater current contribution from the GaAs top cell (GaAs//Si). Our results show that both tandem cells exhibit the same efficiency (21.3%), thereby demonstrating that the third terminal allows for flexibility in the selection of the top cell material, similar to the 4T design.
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