Atomic Layer Deposition of SnO2 as an Electron Transport Material for Solid-State P-type Dye-Sensitized Solar Cells

Tin oxide (SnO2) as an electron transport material was prepared by atomic layer deposition in dye-sensitized NiO films to fabricate solid-state p-type dye-sensitized solar cells using two organic dyes PB6 and TIP as photosensitizers. Due to the excellent electron mobility and satisfactory penetration of SnO2 material into the NiO film, a record photocurrent density over 1 mA cm-2 was achieved with a power conversion efficiency of 0.14%. The effect of an inserted Al2O3 layer between the dye-sensitized NiO and SnO2 layer on photovoltaic performance of the devices was also investigated. The results suggest that the charge recombination between NiO and SnO2 can be significantly suppressed, showing prolonged charge lifetime and enhanced photovoltage.

Automated summary

By using SnO2 as an electron transport material in NiO films, solid-state p-type dye-sensitized solar cells with high photocurrent density and conversion efficiency were achieved. The insertion of an Al2O3 layer effectively suppressed charge recombination between NiO and SnO2, leading to improved photovoltaic performance.