Reversal of anomalous Hall conductivity by perpendicular electric field in 2D WSe2/VSe2 heterostructure

Anomalous Hall conductivity (AHC) and valley polarization are attracting tremendous interest in spintronics and valleytronics technologies. Here, we investigate the possibility of the electric field induced switching of the AHC and magnetic proximity effect induced valley polarization in the two-dimensional (2D) WSe2/1T-VSe2 heterostructure. Due to the small total energy difference, two stackings could happen (C-I and C-II). The WSe2 layer has a valley polarization of -19 meV in the C-II stacking, and it is further increased up to -28 meV under electric fields. Also, we obtain an AHC of 75 (80) S/cm in the C-I (II) stacking. We find a sign change from positive AHC to negative value under the electric field in hole doping of the C-II stacking. We attribute this reversal of the AHC to the electric field dependent Berry curvature variation. Our finding suggests that the electric field induced AHC switching can be possible in the 2D heterostructure. The anomalous Hall effect observed in certain magnetic materials presents opportunities for spin-driven electronics, also known as spintronics. The authors discuss first-principles studies of the band structure and anomalous Hall conductivity of a WSe2/VSe2 heterostructure in two possible configurations, which they find to be tunable by electric field.

Automated summary

This study investigates the effects of an electric field on anomalous Hall conductivity (AHC) and valley polarization in a 2D WSe2/1T-VSe2 heterostructure, with findings indicating the possibility of electric field-induced AHC switching. The research demonstrates the tunability of AHC and valley polarization in the heterostructure under the influence of external factors, suggesting potential applications in spin-driven electronics.