Interface-assisted cation exchange enables high-performance perovskiteLEDs with tunable near-infrared emissions

Achieving high-quality cesium-formamidinium lead iodide (CsxFA1_xPbI3) perovskites with tunable band gaps is highly desired for optoelectronic applications including solar cells and light -emit-ting diodes (LEDs). Herein, by utilizing an alkaline-interface-assisted cation-exchange method, we fabricate highly emissive CsxFA1_x PbI3 perovskite films with fine-tunable Cs-FA alloying ratio for emis-sion-tunable near-infrared (NIR) LEDs. We reveal that the deproto-nation of FA+ cations and the formation of hydrogen-bonded gels consisting of CsI and FA facilitated by the zinc oxide underneath effectively removes the Cs-FA ion-exchange barrier, promoting the formation of phase-pure CsxFA1_xPbI3 films with tunable emis-sions filling the gap between that of pure Cs-and FA-based perov-skites. The obtained NIR perovskite LEDs (PeLEDs) peaking from 715 to 780 nm simultaneously demonstrate high peak external quantum efficiencies of over 15%, maximum radiances exceeding 300 W sr_1 m_2, and high power conversion efficiencies above 10% at 100 mA cm_2, representing the best-performing LEDs based on solution-processed NIR emitters in a similar region.

Automated summary

Highly emissive CsxFA1_xPbI3 perovskite films, which can be used in tunable near-infrared LEDs, were fabricated using an alkaline-interface-assisted cation-exchange method. The Cs-FA ion-exchange barrier was effectively eliminated, enabling the formation of phase-pure CsxFA1_xPbI3 films with tunable emissions. The resulting NIR perovskite LEDs demonstrated high external quantum efficiencies, high radiances, and high power conversion efficiencies, representing the best performance in a similar region.