Monolithic perovskite/black-silicon tandems based on tunnel oxide passivated contacts

Perovskite/silicon tandems offer a promising pathway to increase the efficiency beyond the Auger limit of silicon at minimal additional cost. However, it is challenging to accommodate the solution -pro-cessed perovskite without flattening or reducing pyramidal texture of silicon subcells. Herein, we report the first monolithic perovskite/ silicon tandem featuring an industrially applicable front-side-nano -structured black silicon with a tunnel oxide passivated contact (TOPCon). The TOPCon together with the surface reconstruction of black silicon contributes to the high-level surface passivation without sacrificing the broadband light trapping. Additionally, the reconstructed nanotexture significantly facilitates the wetting of perovskite and acts as a nanoconfining scaffold to guide the vertical growth of perovskite. The resulting tandem yields a certified effi-ciency of 28.2%, representing one of the highest efficiencies re-ported on either perovskite/TOPCon or double-side-textured perovskite/silicon tandems.

Automated summary

Perovskite/silicon tandems offer a promising pathway to increase efficiency beyond the Auger limit of silicon at minimal additional cost. This study reports a monolithic perovskite/silicon tandem with industrially applicable black silicon and a tunnel oxide passivated contact (TOPCon). The reconstructed nano-texture of the black silicon facilitates wetting of perovskite and guides its vertical growth, resulting in one of the highest efficiencies reported on perovskite/TOPCon or double-side-textured perovskite/silicon tandems.