4.8 Article

Low-resistance metal contacts to encapsulated semiconductor monolayers with long transfer length

Related references

Note: Only part of the references are listed.
Article Multidisciplinary Sciences

Promises and prospects of two-dimensional transistors

Yuan Liu et al.

Summary: The article reviews the promise and current status of 2D transistors, emphasizing the potential misestimation or misinterpretation of widely used device parameters. It suggests using more reliable methods to assess the potential of diverse 2D semiconductors and highlights key technical challenges in optimizing the performance of 2D transistors.

NATURE (2021)

Article Multidisciplinary Sciences

Ultralow contact resistance between semimetal and monolayer semiconductors

Pin-Chun Shen et al.

Summary: The article discusses achieving ohmic contact between semimetallic bismuth and semiconducting monolayer transition metal dichalcogenides, suppressing metal-induced gap states and significantly reducing contact resistance. Experimental results demonstrate zero Schottky barrier height and high on-state current density on multilayer MoS2.

NATURE (2021)

Article Materials Science, Multidisciplinary

Analytical measurements of contact resistivity in two-dimensional WSe2 field-effect transistors

Inyong Moon et al.

Summary: This study presents three different methods for determining the contact resistivity in 2D WSe2 field effect transistors. These methods were validated through theoretical analysis and electrical measurements, confirming the effectiveness and accuracy of the model.

2D MATERIALS (2021)

Review Engineering, Electrical & Electronic

A review on Raman finger prints of doping and strain effect in TMDCs

Muhammad Waqas Iqbal et al.

MICROELECTRONIC ENGINEERING (2020)

Article Nanoscience & Nanotechnology

Odd- and even-denominator fractional quantum Hall states in monolayer WSe2

Qianhui Shi et al.

NATURE NANOTECHNOLOGY (2020)

Article Chemistry, Physical

Disorder in van der Waals heterostructures of 2D materials

Daniel Rhodes et al.

NATURE MATERIALS (2019)

Article Chemistry, Multidisciplinary

Approaching the Intrinsic Limit in Transition Metal Diselenides via Point Defect Control

Drew Edelberg et al.

NANO LETTERS (2019)

Article Engineering, Electrical & Electronic

Transferred via contacts as a platform for ideal two-dimensional transistors

Younghun Jung et al.

NATURE ELECTRONICS (2019)

Article Engineering, Electrical & Electronic

Carbon nanotube digital electronics

Lian-Mao Peng et al.

NATURE ELECTRONICS (2019)

Article Chemistry, Multidisciplinary

Via Method for Lithography Free Contact and Preservation of 2D Materials

Evan J. Telford et al.

NANO LETTERS (2018)

Article Multidisciplinary Sciences

A library of atomically thin metal chalcogenides

Jiadong Zhou et al.

NATURE (2018)

Article Engineering, Electrical & Electronic

Three-dimensional integration of plasmonics and nanoelectronics

Yang Liu et al.

NATURE ELECTRONICS (2018)

Review Chemistry, Physical

Mixed-dimensional van der Waals heterostructures

Deep Jariwala et al.

NATURE MATERIALS (2017)

Review Nanoscience & Nanotechnology

2D transition metal dichalcogenides

Sajedeh Manzeli et al.

NATURE REVIEWS MATERIALS (2017)

Article Chemistry, Physical

Defects as a factor limiting carrier mobility in WSe2: A spectroscopic investigation

Zhangting Wu et al.

NANO RESEARCH (2016)

Article Chemistry, Multidisciplinary

Does p-type ohmic contact exist in WSe2-metal interfaces?

Yangyang Wang et al.

NANOSCALE (2016)

Review Multidisciplinary Sciences

2D materials and van der Waals heterostructures

K. S. Novoselov et al.

SCIENCE (2016)

Article Materials Science, Multidisciplinary

Two-dimensional semiconductors for transistors

Manish Chhowalla et al.

Nature Reviews Materials (2016)

Article Chemistry, Multidisciplinary

Toward Barrier Free Contact to Molybdenum Disulfide Using Graphene Electrodes

Yuan Liu et al.

NANO LETTERS (2015)

Article Nanoscience & Nanotechnology

Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform

Xu Cui et al.

NATURE NANOTECHNOLOGY (2015)

Article Chemistry, Multidisciplinary

Electron and Hole Mobilities in Single-Layer WSe2

Adrien Allain et al.

ACS NANO (2014)

Article Engineering, Electrical & Electronic

A Test Structure to Characterize Nano-Scale Ohmic Contacts in III-V MOSFETs

Wenjie Lu et al.

IEEE ELECTRON DEVICE LETTERS (2014)

Article Materials Science, Multidisciplinary

Hole mobility enhancement and p-doping in monolayer WSe2 by gold decoration

Chang-Hsiao Chen et al.

2D MATERIALS (2014)

Article Multidisciplinary Sciences

Van der Waals heterostructures

A. K. Geim et al.

NATURE (2013)

Article Multidisciplinary Sciences

One-Dimensional Electrical Contact to a Two-Dimensional Material

L. Wang et al.

SCIENCE (2013)

Article Chemistry, Multidisciplinary

High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

Hui Fang et al.

NANO LETTERS (2012)

Review Nanoscience & Nanotechnology

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

Qing Hua Wang et al.

NATURE NANOTECHNOLOGY (2012)

Article Nanoscience & Nanotechnology

Single-layer MoS2 transistors

B. Radisavljevic et al.

NATURE NANOTECHNOLOGY (2011)

Article Nanoscience & Nanotechnology

Boron nitride substrates for high-quality graphene electronics

C. R. Dean et al.

NATURE NANOTECHNOLOGY (2010)

Article Multidisciplinary Sciences

Frictional Characteristics of Atomically Thin Sheets

Changgu Lee et al.

SCIENCE (2010)