SiC detectors: A review on the use of silicon carbide as radiation detection material

Silicon Carbide (SiC) is a wide bandgap semiconductor with many excellent properties that make it one of the most promising and well-studied materials for radiation particle detection. This review provides an overview of the main advantages in the use of SiC detectors and the current state of research in this field. Key aspects related to material properties, growth techniques, doping, defects, electrical contacts, and characterization methods are summarized, with particular emphasis on how these can be related to detector performance. The most recent and significant experimental results on the use of SiC diodes for the detection of electrons, protons, alpha, ions, UV radiation, x/gamma-rays, and neutrons are discussed. The effects of high temperature operation and radiation damage on detector performance are outlined.

Automated summary

Silicon Carbide (SiC) is a wide bandgap semiconductor with excellent properties, making it a promising material for radiation particle detection. This review provides an overview of the advantages and current research in SiC detectors. Key aspects related to material properties, growth techniques, doping, defects, electrical contacts, and characterization methods are summarized, with emphasis on their relationship to detector performance. The most recent experimental results on the use of SiC diodes for detecting various particles and radiation are discussed, as well as the effects of high temperature operation and radiation damage on detector performance.