Journal
RESEARCH
Volume 2022, Issue -, Pages -Publisher
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.34133/2022/9865926
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Funding
- National Natural Science Foundation of China [62004029, 62074029, 61804023, 61971108]
- Key Research and Development Program of Sichuan Province [2020ZHCG0038]
- Sichuan Science and Technology Program [2019YJ0198, 2020YJ0015]
- Fundamental Research Funds for the Central Universities [ZYGX2019Z002]
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This paper presents a highly sensitive temperature sensor using AlN-on-Si resonators with coupled-beam structures. The out-of-plane flexural mode is utilized to achieve a large temperature coefficient of resonant frequency. The measured sensitivities in the temperature range of 25°C to 60°C show great potential for on-chip temperature compensation scheme for cofabricated sensors.
This paper reports a type of highly sensitive temperature sensor utilizing AlN-on-Si resonators with coupled-beam structures of double- and triple-ended-tuning-fork (D/TETF). For both resonators, the out-of-plane flexural mode is adopted as it favors the effect of thermal mismatch between the composite layers inherent to the AlN-on-Si structure and thus helps attain a large temperature coefficient of resonant frequency (TCF). The analytical model to calculate TCF values of D/TETF AlN-on-Si resonators is provided, which agrees well with the finite-element simulation and experimental results. The resonant temperature sensor is built by closing the loop of the AlN-on-Si resonator, a transimpedance amplifier, a low-pass filter, and a phase shifter to form an oscillator, the output frequency of which shifts proportionally to the ambient temperature. The measured sensitivities of the temperature sensors using D/TETF resonators are better than -1000 ppm/degrees C in the temperature range of 25 degrees C similar to 60 degrees C, showing great potential to fulfill the on-chip temperature compensation scheme for cofabricated sensors.
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