4.6 Article

A 26-30 GHz GaN HEMT Low-Noise Amplifier Employing a Series Inductor-Based Stability Enhancement Technique

Journal

ELECTRONICS
Volume 11, Issue 17, Pages -

Publisher

MDPI
DOI: 10.3390/electronics11172716

Keywords

fifth generation (5G); gallium nitride (GaN); high electron mobility transistor (HEMT); low-noise amplifier (LNA); millimeter wave; silicon carbide (SiC); stability

Funding

  1. Institute for Information and communications Technology Planning (IITP) - Ministry of Science and ICT [2020-0-00158-001]
  2. National Research Foundation of Korea (NRF) - Ministry of Education (MOE) [2021RIS-004]

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This article presents the design of a 26-30 GHz gallium nitride high electron mobility transistor low-noise amplifier for fifth-generation base station applications. The proposed design utilizes a series inductor-based stability enhancement technique. Experimental results demonstrate that the design achieves high gain and stability, meeting the requirements for base station applications.
This article presents a 26-30 GHz gallium nitride (GaN) high electron mobility transistor (HEMT) low-noise amplifier (LNA) for fifth-generation base station applications. In the proposed design, a series inductor-based stability enhancement technique was utilized to improve the reverse isolation and stability performance of the amplifier and to mitigate the effect of the parasitic capacitance of the GaN HEMT device. To validate the concept of the design, a three-stage GaN HEMT LNA was designed and fabricated in a 0.15-um GaN on silicon carbide technology. The demonstrated design achieved a gain of 20.2 dB, a noise figure of 2.4-2.5 dB, an output 1-dB compression point of 17.2 dBm, and an output third-order intercept point of 32.2 dBm. The design also attained stability (mu criterion) up to 7.7 at the operating frequency. The implemented design consumed power of 320 mW with a nominal supply of 10 V.

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