Journal
ELECTRONICS
Volume 11, Issue 18, Pages -Publisher
MDPI
DOI: 10.3390/electronics11182822
Keywords
amorphous oxide semiconductors; zinc tin oxide; solution process; thin-film transistor; pre-annealing
Categories
Funding
- National Research Foundation of Korea (NRF) - Korea government (MSIT) [2021R1A2C1011429]
- National Research Foundation of Korea [2021R1A2C1011429] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Controlling the temperature of the pre-annealing stage is crucial for the evaporation of solvent in solution-processed ZTO TFTs, leading to enhanced electrical performance and stability. Increasing the temperature can effectively remove organic defects, but excessive temperatures may result in structural defects.
We focused on the importance of solvent evaporation governed by the temperature of the pre-annealing stage (T-S) in solution-processed zinc tin oxide (ZTO) thin-film transistors (TFTs). We controlled T-S based on the boiling point (B-P) of the solvent used. When T-S reaches the B-P, the field effect mobility is found to be about 1.03 cm2/V s, which is 10 times larger than the T-S < B-p case (0.13 cm(2)/V s). The reason is presumed to be that residual organic defects are effectively removed as T-S increases. In addition, when Ts is beyond B-p, the mobility is rather decreased due to structural defects such as pores and pinholes. Based on our results, it is noted that T-S plays a significant role in the enhancement of electrical performance and stability of solution-processed ZTO TFTs.
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