Fabrication of a Periodic Inverse Micropyramid (PIMP)-Si/In2Se3 Heterojunction Photodetector Array for RGB-IR Image Sensing Application

Here, the fabrication of an addressable 8 x 8 photodetector array is reported by combining In2Se3 nanofilm with periodic inverse micropyramid-Si (PIMP-Si), which is obtained through colloidal lithography and anisotropic wet etching. Due to the unique configuration and the outstanding light trapping effect, the as-fabricated heterojunction device presents an excellent self-powered photoresponse over the broadband wavelength range from 265 to 1300 nm, with a peak sensitivity at approximate to 810 nm. The responsivity, specific detectivity, and rise/fall time are estimated to be 0.58 A W-1, 1.76 x 10(12) Jones, and 5.1/18 mu s, respectively, which are competitive in comparison with other devices with similar geometries. Meanwhile, the photodetector array displays a satisfactory pixel-to-pixel uniformity, which allows the device to record the full-color image of HFUT with satisfying resolution, revealing the potential application of the PIMP-Si/In2Se3 heterojunction photodetector array for real-time red-green-blue-infrared image sensing and video capturing.

Automated summary

An addressable 8 x 8 photodetector array is fabricated by combining In2Se3 nanofilm with periodic inverse micropyramid-Si (PIMP-Si). The device exhibits excellent self-powered photoresponse, competitive performance, and satisfactory pixel-to-pixel uniformity, showing potential applications in full-color image sensing and video capturing.