Journal
NPJ COMPUTATIONAL MATERIALS
Volume 8, Issue 1, Pages -Publisher
NATURE PORTFOLIO
DOI: 10.1038/s41524-022-00894-5
Keywords
-
Funding
- National Natural Science Foundation of China [11774236]
- Ministry of Science and Technology of China [SQ2020YFE010418]
- Open Grant of State Key Laboratory of Low Dimensional Quantum Physics at Tsinghua University
- NSF of China [11874263]
- Sino-German mobility program [M-0006]
- Shanghai Technology Innovation Action Plan 2020-Integrated Circuit Technology Support Program [20DZ1100605]
Ask authors/readers for more resources
We provide design principles for inducing multiple topological states in oxide superlattices and show the existence of a strong topological insulator and multiple coexisting topological Dirac semi-metal states in a specific oxide superlattice.
Oxide heterostructures exhibit many intriguing properties. Here we provide design principles for inducing multiple topological states in (001) (AMO(3))(1)/(AM'O-3)(1) oxide superlattices. Aided by first-principles calculations and model analysis, we show that a (SrMO3)(1)/(SrM'O-3)(1) superlattice (M = Nb, Ta and M' = Rh, Ir) is a strong topological insulator with Z(2) index (1;001). More remarkably, a (SrMoO3)(1)/(SrIrO3)(1) superlattice exhibits multiple coexisting topological insulator (TI) and topological Dirac semi-metal (TDS) states. The TDS state has a pair of type-II Dirac points near the Fermi level and symmetry-protected Dirac node lines. The surface TDS Dirac cone is sandwiched by two surface TI Dirac cones in the energy-momentum space. The non-trivial topological properties arise from the band inversion between d orbitals of two dissimilar transition metal atoms and a particular parity property of (001) superlattice geometry. Our work demonstrates how to induce non-trivial topological states in (001) perovskite oxide heterostructures by rational design.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available