Organic Vapor Sensing Mechanisms by Large-Area Graphene Back- Gated Field-Effect Transistors under UV Irradiation

The gas sensing properties of graphene back-gated field-effect transistor (GFET) sensors toward acetonitrile, tetrahydrofuran, and chloroform vapors were investigated with the focus on unfolding possible gas detection mechanisms. The FET configuration of the sensor device enabled gate voltage tuning for enhanced measurements of changes in DC electrical characteristics. Electrical measurements were combined with a fluctuation-enhanced sensing methodology and intermittent UV irradiation. Distinctly different features in 1/f noise spectra for the organic gases measured under UV irradiation and in the dark were observed. The most intense response observed for tetrahydrofuran prompted the decomposition of the DC characteristic, revealing the photoconductive and photogating effect occurring in the graphene channel with the dominance of the latter. Our observations shed light on understanding surface processes at the interface between graphene and volatile organic compounds for graphene-based sensors in ambient conditions that yield enhanced sensitivity and selectivity.

Automated summary

This study investigated the gas sensing properties of graphene back-gated field-effect transistor (GFET) sensors towards acetonitrile, tetrahydrofuran, and chloroform vapors, and unfolded possible gas detection mechanisms. Electrical measurements combined with fluctuation-enhanced sensing methodology and intermittent UV irradiation revealed distinctly different features in 1/f noise spectra for the organic gases measured under UV irradiation and in the dark. The most intense response observed for tetrahydrofuran prompted the decomposition of the DC characteristic, uncovering the photoconductive and photogating effect occurring in the graphene channel.