Related references
Note: Only part of the references are listed.Optical Constant and Conformality Analysis of SiO2 Thin Films Deposited on Linear Array Microstructure Substrate by PECVD
Yongqiang Pan et al.
COATINGS (2021)
Atmospheric Plasma-Enhanced Spatial Chemical Vapor Deposition of SiO2 Using Trivinylmethoxysilane and Oxygen Plasma
Viet Huong Nguyen et al.
CHEMISTRY OF MATERIALS (2020)
Stress and Refractive Index Control of SiO2 Thin Films for Suspended Waveguides
Neal Wostbrock et al.
NANOMATERIALS (2020)
Mechanism of dense silicon dioxide films deposited under 100 °C via inductively coupled plasma chemical vapor deposition
Shui-Yang Lien et al.
SURFACE & COATINGS TECHNOLOGY (2019)
Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice
Hong-Ping Ma et al.
NANOMATERIALS (2019)
Dielectric barrier layers by low-temperature plasma-enhanced atomic layer deposition of silicon dioxide
Michael T. Barako et al.
THIN SOLID FILMS (2018)
SiOx containing diamond like carbon coatings: Effect of substrate bias during deposition
S. A. Barve et al.
DIAMOND AND RELATED MATERIALS (2017)
Junction Yield Analysis for 10 V Programmable Josephson Voltage Standard Devices
Anna Fox et al.
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY (2015)
Electrical Properties of Ultrathin SiO2 Layer Deposited at 50 °C by Inductively Coupled Plasma-Enahnced Chemical Vapor Deposition
Giovanni Mannino et al.
APPLIED PHYSICS EXPRESS (2012)
Components for silicon plasmonic nanocircuits based on horizontal Cu-SiO2-Si-SiO2-Cu nanoplasmonic waveguides
Shiyang Zhu et al.
OPTICS EXPRESS (2012)
High Quality SiO2 Deposited at 80 degrees C by Inductively Coupled Plasma Enhanced CVD for Flexible Display Application
Tao Chen et al.
ELECTROCHEMICAL AND SOLID STATE LETTERS (2010)
Effect of Pulsed Substrate Bias on Film Properties of SiO2 Deposited by Inductively Coupled Plasma Chemical Vapor Deposition
Takahiro Hiramatsu et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2010)
Deposition of Dielectric Films with Inductively Coupled Plasma-CVD in Dependence on Pressure and Two RF-Power-Sources
Sandro Jatta et al.
PLASMA PROCESSES AND POLYMERS (2009)
Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD
A. Boogaard et al.
SURFACE & COATINGS TECHNOLOGY (2007)
SiO2 insulator film synthesized at 100 °C using tetramethylsilane by inductively coupled plasma chemical vapor deposition
Hiroshi Furuta et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2007)
Thermal stability of Nb/a-NbxSi1-x/Nb Josephson junctions
B. Baek et al.
PHYSICAL REVIEW B (2007)
High density plasma chemical vapor deposition gap-fill mechanisms
HP Mungekar et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2006)
Effect of the ion bombardment energy on silicon dioxide films deposited from oxygen/tetraethoxysilane plasmas in a helicon reactor
D Goghero et al.
THIN SOLID FILMS (2005)
Gap-fill process of shallow trench isolation for 0.13 μm technologies
H Nishimura et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS (2002)