4.7 Article

Systematic investigation of millimeter-wave optic modulation performance in thin-film lithium niobate

Journal

PHOTONICS RESEARCH
Volume 10, Issue 10, Pages 2380-2387

Publisher

CHINESE LASER PRESS
DOI: 10.1364/PRJ.468518

Keywords

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Categories

Funding

  1. National Natural Science Foundation of China [61922092]
  2. Research Grants Council, University Grants Committee [CityU 11204820, CityU 21208219, T42-103/16-N]
  3. Croucher Foundation [9509005]
  4. City University of Hong Kong [9610402, 9610455]
  5. Central Research Fund (CRF)
  6. Agency for Science, Technology and Research (A*STAR)
  7. Harvard Quantum Initiative (HQI) Postdoctoral Fellowship

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By experimentally verifying thin-film lithium niobate modulators, the research investigated their high-frequency mmWave optical modulation performance and achieved a series of important performance indicators. This study provides detailed guidance for the design and characterization of mmWave-optic modulators and lays the foundation for the development of future mmWave photonic systems.
Millimeter-wave (mmWave) band (30-300 GHz) is an emerging spectrum range for wireless communication, short-range radar, and sensor applications. mmWave-optic modulators that could efficiently convert mmWave signals into the optical domain are crucial components for long-haul transmission of mmWave signals through optical networks. At these ultrahigh frequencies, however, the modulation performances are highly sensitive to the transmission line loss as well as the velocity- and impedance-matching conditions, while precise measurements and modeling of these parameters are often non-trivial. Here we present a systematic investigation of the mmWave-optic modulation performances of thin-film lithium niobate modulators through theoretical modeling, electrical verifications, and electro-optic measurements at frequencies up to 325 GHz. Based on our experimentally verified model, we demonstrate thin-film lithium niobate mmWave-optic modulators with a measured 3-dB electro-optic bandwidth of 170 GHz and a 6-dB bandwidth of 295 GHz. The device also shows a low RF half-wave voltage of 7.3 V measured at an ultrahigh modulation frequency of 250 GHz. This work provides a comprehensive guideline for the design and characterization of mmWave-optic modulators and paves the way toward future integrated mmWave photonic systems for beyond-5G communication and radar applications. (c) 2022 Chinese Laser Press

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