Journal
CRYSTALS
Volume 12, Issue 10, Pages -Publisher
MDPI
DOI: 10.3390/cryst12101373
Keywords
InGaN; epitaxial lateral overgrowth; multiple quantum wells
Funding
- NEDO [I-D2]
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This study reports the growth and characterization of thick, completely relaxed {11-22}-oriented InGaN layers using epitaxial lateral overgrowth (ELO). The results show that the performance of ELO-InGaN on InGaN templates is significantly better than that of non-ELO InGaN.
We report the growth and characterization of thick, completely relaxed {11-22}-oriented InGaN layers using epitaxial lateral overgrowth (ELO). Although it was difficult to grow ELO-InGaN layers on patterned GaN templates, we succeeded in growing ELO-InGaN layers on a patterned InGaN template. The full width at half maximum of the X-ray rocking curve of ELO-InGaN on the InGaN templates was less than that of non-ELO InGaN. The photoluminescence intensity of InGaN/GaN multiple quantum wells on ELO-InGaN was approximately five times stronger than that on the {11-22} GaN template.
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