2D Layers of Group VA Semiconductors: Fundamental Properties and Potential Applications

Members of the 2D group VA semiconductors (phosphorene, arsenene, antimonene, and bismuthine) present a new class of 2D materials, which are recently gaining a lot of research interest. These materials possess layered morphology, tunable direct bandgap, high charge carrier mobility, high stability, unique in-plane anisotropy, and negative Poisson's ratio. They prepare the ground for novel and multifunctional applications in electronics, optoelectronics, and batteries. The most recent analytical and empirical developments in the fundamental characteristics, fabrication techniques, and potential implementation of 2D group VA materials in this review, along with presenting insights and concerns for the field's future are analyzed.

Automated summary

Members of the 2D group VA semiconductors, such as phosphorene, arsenene, antimonene, and bismuthine, are a new class of 2D materials that have gained significant research interest. These materials have layered morphology, tunable direct bandgap, high charge carrier mobility, high stability, unique in-plane anisotropy, and negative Poisson's ratio, making them promising for various applications in electronics, optoelectronics, and batteries. This review analyzes the recent advancements in the fundamental characteristics, fabrication techniques, and potential implementation of 2D group VA materials, as well as provides insights and concerns for the future of this field.