Journal
ADVANCED ELECTRONIC MATERIALS
Volume 9, Issue 1, Pages -Publisher
WILEY
DOI: 10.1002/aelm.202200704
Keywords
2D materials; anti-ambipolar transistors; reconfigurable logic circuits; ReS; (2); WSe; (2)
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This paper presents a dual-gate anti-ambipolar transistor (AAT) with a two-dimensional ReS2 and WSe2 heterojunction, where the characteristic ?-shaped transfer curves controlled by the top-gate voltage effectively control the bottom-gate voltage. This feature is applied to logic operations, allowing the AAT to perform all two-input logic operations under optimized input voltages and achieve switching between AND and OR logic operations induced by the drain voltage.
A dual-gate anti-ambipolar transistor (AAT) with a two-dimensional ReS2 and WSe2 heterojunction is developed. The characteristic ?-shaped transfer curves yielded by the bottom-gate voltage are effectively controlled by the top-gate voltage. This feature is applied to logic operations, with the bottom- and top-gate voltages acting as two input signals and the drain current (I-d) monitored as an output signal. Importantly, a single dual-gate AAT exhibits all the two-input logic operations (AND, OR, XOR, NAND, NOR, and XNOR) under optimized input voltages. Additionally, drain voltage (V-d)-induced switching between AND and OR logic operations is achieved. These features are advantageous for simplifying circuit design.
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