Electronic Transport Properties and Nanodevice Designs for Monolayer MoSi2P4

A family of MA2Z4 materials has recently inspired great interest due to its exotic geometry and intriguing electronic properties. Here we investigate the electronic transport and photoelectric properties of MoSi2P4 monolayer (MSP ML) that has a small direct gap using first-principles calculations. We design several model nanodevices based on MSP ML, including p-n junction diodes, p-i-n junction field-effect transistors, and photoelectric transistors. We demonstrate that these MSP-ML-based nanodevices yield superb transport properties, including significant rectifying effect, high electrical anisotropy, pronounced field-effect behavior, strong photoelectric response, and large photovoltaic power. These findings reveal the multifunctional nature of MoSi2P4 monolayer, promising its application as a designer material in next-generation ultrathin flexible semiconductor nanodevices.

Automated summary

In this study, we investigated the electronic transport and photoelectric properties of MoSi2P4 monolayer (MSP ML) using first-principles calculations. We designed several nanodevices based on MSP ML and showed that they have excellent transport properties and photoelectric response. These findings highlight the potential application of MoSi2P4 monolayer in next-generation ultrathin flexible semiconductor nanodevices.