Journal
PHYSICAL REVIEW APPLIED
Volume 18, Issue 3, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevApplied.18.034033
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Funding
- National Natural Science Foundation of China [12274117, 62274066, 62275074]
- Science Foundation for the Excellent Youth Scholars of Henan Province [202300410226]
- Scientific and Technological Innovation Program of Henan Province's Universities [20HASTIT026]
- Key Scientific Project of Universities of Henan Province [22A140020]
- Young Top-notch Talents Project of Henan Province
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In this study, we investigated the electronic transport and photoelectric properties of MoSi2P4 monolayer (MSP ML) using first-principles calculations. We designed several nanodevices based on MSP ML and showed that they have excellent transport properties and photoelectric response. These findings highlight the potential application of MoSi2P4 monolayer in next-generation ultrathin flexible semiconductor nanodevices.
A family of MA2Z4 materials has recently inspired great interest due to its exotic geometry and intriguing electronic properties. Here we investigate the electronic transport and photoelectric properties of MoSi2P4 monolayer (MSP ML) that has a small direct gap using first-principles calculations. We design several model nanodevices based on MSP ML, including p-n junction diodes, p-i-n junction field-effect transistors, and photoelectric transistors. We demonstrate that these MSP-ML-based nanodevices yield superb transport properties, including significant rectifying effect, high electrical anisotropy, pronounced field-effect behavior, strong photoelectric response, and large photovoltaic power. These findings reveal the multifunctional nature of MoSi2P4 monolayer, promising its application as a designer material in next-generation ultrathin flexible semiconductor nanodevices.
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