Journal
NANOMATERIALS
Volume 12, Issue 17, Pages -Publisher
MDPI
DOI: 10.3390/nano12172983
Keywords
Ag2O/beta-Ga2O3; heterojunction; deep ultraviolet; photodetector; post-annealing
Categories
Funding
- Korea Institute for Advancement of Technology(KIAT) - Korea Government(MOTIE) [P0012451]
- Gachon University research fund of 2021 [GCU-202008450010]
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A high-photoresponsivity self-powered deep ultraviolet (DUV) photodetector based on an Ag2O/beta-Ga2O3 heterojunction was fabricated. The detector exhibits rectification characteristics and high photo-responsivity at zero bias voltage.
In this study, a high-photoresponsivity self-powered deep ultraviolet (DUV) photodetector based on an Ag2O/beta-Ga2O3 heterojunction was fabricated by depositing a p-type Ag2O thin film onto an n-type beta-Ga2O3 layer. The device characteristics after post-annealing at temperatures ranging from 0 to 400 degrees C were investigated. Our DUV devices exhibited typical rectification characteristics. At a post-annealing temperature of 300 degrees C, the as-fabricated device had a low leakage current of 4.24 x 10(-11) A, ideality factor of 2.08, and a barrier height of 1.12 eV. Moreover, a high photo-responsivity of 12.87 mA/W was obtained at a 100 mu W/cm(2) light intensity at a 254 nm wavelength at zero bias voltage, the detectivity was 2.70 x 10(11) Jones, and the rise and fall time were 29.76, 46.73 ms, respectively. Based on these results, the Ag2O/beta-Ga2O3 heterojunction photodetector operates without an externally applied voltage and has high responsivity, which will help in the performance improvement of ultraviolet sensing systems.
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