4.7 Article

Study on Modulation Bandwidth of GaN-Based Micro-Light-Emitting Diodes by Adjusting Quantum Well Structure

Journal

NANOMATERIALS
Volume 12, Issue 21, Pages -

Publisher

MDPI
DOI: 10.3390/nano12213818

Keywords

micro-light-emitting diodes; modulation bandwidth; quantum-confined Stark effect

Funding

  1. National Key Research and Development Program of China [2021YFB3601600]
  2. National Natural Science Foundation of China [62204128, 62004104, 61974062]
  3. Key Technologies R&D Program of Huzhou City Science and Technology Project [2020GG03]
  4. Natural Science Foundation of Jiangsu Province [BK20220399]
  5. Natural Science Research of Jiangsu Higher Education Institutions of China [20KJB510014]
  6. Leading-edge Technology Program of Jiangsu Natural Science Foundation [BE2021008-2]
  7. Foundation of Jiangsu Provincial Double-Innovation Doctor Program [JSSCBS20210522]
  8. National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology [KFJJ20200203]
  9. NJUPTSF [NY220078]

Ask authors/readers for more resources

In this study, GaN-based blue micro-light-emitting diodes (mu-LEDs) with different structures were designed, and the effect of quantum well (QW) structure on modulation bandwidth was explored. It was found that trapezoidal QWs can enhance modulation bandwidth and improve carrier lifetime.
GaN-based blue micro-light-emitting diodes (mu-LEDs) with different structures were designed, of which the effect of quantum well (QW) structure on modulation bandwidth was numerically explored. By using trapezoidal QWs, the quantum-confined Stark effect (QCSE) can be reduced, leading to an enhanced electron-hole wave function overlap, thereby increasing the recombination rate and reducing the differential carrier lifetime. In addition, the improved hole transport also creates favorable conditions for shortening the differential carrier lifetime. Furthermore, by comparing with traditional mu-LEDs with different thicknesses of QW, the modulation bandwidth of mu-LEDs with trapezoidal QWs exhibits a large advantage at lower current densities of below 2 kA/cm(2).

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