Journal
NANOMATERIALS
Volume 12, Issue 19, Pages -Publisher
MDPI
DOI: 10.3390/nano12193531
Keywords
physical transient; biological materials; graphene quantum dots; OR gate
Categories
Funding
- National Natural Science Foundation of China [61801174]
- Natural Science Foundation of Heilongjiang Province, China [LH2021F045]
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This paper presents the fabrication of a physically transient resistive random-access memory (RRAM) device using a composite material of egg protein and graphene quantum dots. The device exhibits good memory characteristics and biodegradability, making it a promising candidate for transient electronic systems.
Physical transient electronics have attracted more attention as the basis for building green electronics and biomedical devices. However, there are difficulties in selecting materials for the fabricated devices to take into account both biodegradability and high performance. In this paper, a physically transient resistive random-access memory (RRAM) device was fabricated by using egg protein and graphene quantum dot composites as active layers. The sandwich structure composed of Al/EA:GQD/ITO shows a good write-once-multiple-read memory characteristic, and the introduced GQD improves the switching current ratio of the device. By using the sensitivity of GQDs to ultraviolet light, the logic operation of the OR gate is completed. Furthermore, the device exhibits a physical transient behavior and good biodegradability due to the dissolution behavior in deionized water. These results suggest that the device is a favorable candidate for the construction of memory elements for transient electronic systems.
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