Journal
NANOMATERIALS
Volume 12, Issue 18, Pages -Publisher
MDPI
DOI: 10.3390/nano12183227
Keywords
SnO2 thin films; metal oxide gas sensor; hydrogen gas sensor; annealing effect
Categories
Funding
- Korea Institute of Industrial Technology [Kitech EO-22-0001]
- Institute of Civil Military Technology Cooperation
- Ministry of Trade, Industry and Energy of the Korean government [21-SF-BR-05]
- Korea Innovation Foundation (INNOPOLIS) - Korean government (MSIT) [2020-DD-UP-0348]
- Defense Acquisition Program Administration
- Agency for Defense Development (ADD), Republic of Korea [21-SF-BR-05] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The study focuses on the performance of SnO2 thin film sensors for H-2 gas, revealing that annealed films exhibit higher response and shorter response time.
Hydrogen (H-2) is attracting attention as a renewable energy source in various fields. However, H-2 has a potential danger that it can easily cause a backfire or explosion owing to minor external factors. Therefore, H-2 gas monitoring is significant, particularly near the lower explosive limit. Herein, tin dioxide (SnO2) thin films were annealed at different times. The as-obtained thin films were used as sensing materials for H-2 gas. Here, the performance of the SnO2 thin film sensor was studied to understand the effect of annealing and operating temperature conditions of gas sensors to further improve their performance. The gas sensing properties exhibited by the 3-h annealed SnO2 thin film showed the highest response compared to the unannealed SnO2 thin film by approximately 1.5 times. The as-deposited SnO2 thin film showed a high response and fast response time to 5% H-2 gas at 300 degrees C of 257.34% and 3 s, respectively.
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