4.7 Article

RPA Plasmons in Graphene Nanoribbons: Influence of a VO2 Substrate

Journal

NANOMATERIALS
Volume 12, Issue 16, Pages -

Publisher

MDPI
DOI: 10.3390/nano12162861

Keywords

plasmon; graphene nanoribbon; random-phase approximation; quantum wire; VO2; phase-change materials; normalized Fermi velocity

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We studied the influence of VO2 on plasmons in metallic AGNRs and assessed the effect of temperature on the plasmon modes. The results show that AGNRs support localized and propagating plasmon modes, and the presence of VO2 affects intra-band transitions, but neglects the influence of a substrate-induced band gap.
We study the effect of the phase-change material VO2 on plasmons in metallic arm-chair graphene nanoribbons (AGNRs) within the random-phase approximation (RPA) for intra- and inter-band transitions. We assess the influence of temperature as a knob for the transition from the insulating to the metallic phase of VO2 on localized and propagating plasmon modes. We show that AGNRs support localized and propagating plasmon modes and contrast them in the presence and absence of VO2 for intra-band (SB) transitions while neglecting the influence of a substrate-induced band gap. The presence of this gap results in propagating plasmon modes in two-band (TB) transitions. In addition, there is a critical band gap below and above which propagating modes have a linear negative or positive velocity. Increasing the band gap shifts the propagating and localized modes to higher frequencies. In addition, we show how the normalized Fermi velocity increases plasmon modes frequency.

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