Multiple Resistive Switching Mechanisms in Graphene Oxide-Based Resistive Memory Devices

Among the different graphene derivatives, graphene oxide is the most intensively studied material as it exhibits reliable and repeatable resistive switching. The operative mechanisms that are responsible for resistive switching are being intensively investigated, and three models explaining the change in the resistive states have been developed. These models are grounded in the metallic-like filamentary conduction, contact resistance modification and the oxidation of/reduction in the graphene oxide bulk. In this work, using Al/GO/n-Si structures, we demonstrate that all three of these operative mechanisms can simultaneously participate in the resistive switching of graphene oxide. Multiple point-like conduction channels in the graphene oxide films were detected by the electron beam-induced current (EBIC) technique. At the same time, large areas with increased conductivity were also revealed by EBIC. An analysis of these areas by Raman spectroscopy indicates the change in the graphene oxide bulk's resistive properties. The EBIC data along with the measurements of the capacitance-voltage characteristics provided strong evidence of the involvement of an aluminum/graphene oxide interface in the switching processes. In addition, by using Al/GO/n-Si structures, we were able to identify unique local properties of the formed conductive channels, namely the change of the charge state of a conductive channel due to the creation of negatively charged traps and/or an increase in the GO work function.

Automated summary

Graphene oxide, among various graphene derivatives, is the most studied material due to its reliable and repeatable resistive switching properties. Researchers have identified three operative mechanisms responsible for this resistive switching, including metallic-like filamentary conduction, contact resistance modification, and oxidation/reduction in the bulk of graphene oxide.