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Summary: The electronic properties of a field-effect transistor with MoSi2N4 and MoSi2N4 monolayers as the channel material under biaxial strain are investigated. The band gaps can be adjusted by strain, and the I-ON/I-OFF ratios of these compounds also vary with strain.
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JOURNAL OF PHYSICS D-APPLIED PHYSICS
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Chen Shen et al.
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Song Lu et al.
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Cuong Q. Nguyen et al.
Summary: In this study, the atomic and electronic structures of the C3N4/MoSi2N4 van der Waals heterostructure (vdWH) were investigated. It was found that the C3N4/MoSi2N4 vdWH has a semiconductor characteristic with a band gap in the visible light range, indicating strong optical absorption. The band edges of the C3N4/MoSi2N4 vdWH originate from the C3N4 and MoSi2N4 layers, resulting in a type-II band alignment. Furthermore, the electronic structure and band alignment types can be flexibly tuned by external electric field and interlayer distance change.
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A. Bafekry et al.
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Jinfeng Zhao et al.
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Hui Yao et al.
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Yikai Lu et al.
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Junsheng Huang et al.
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Avijeet Ray et al.
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Summary: The MA(2)Z(4) nanosheets exhibit superior stability, mechanical properties, electronic properties, and thermal conductivity. In particular, WSi2N4, CrSi2N4, and MoSi2N4 demonstrate the highest piezoelectric coefficients among all known 2D materials, highlighting their potential for applications in nanoelectronics, optoelectronics, energy storage/conversion, and thermal management systems.
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Shoeib Babaee Touski et al.
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Qianqian Wang et al.
Summary: MoSi2N4 and WSi2N4 monolayers show suppressed Fermi level pinning and tunable Schottky barrier height, with exceptional SBH slope parameter and efficient Ohmic contacts, making them promising for high-performance and energy-efficient 2D semiconductor devices.
NPJ 2D MATERIALS AND APPLICATIONS
(2021)
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Zhenwei Wang et al.
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Materials Science, Multidisciplinary
Xiaolin Cai et al.
Summary: A two-dimensional vertical MoSe2/MoSi2N4 vdWH with excellent electronic and optical properties has been designed. The vdWH responds well to strain and external electric fields, showing transitions between different bandgap characteristics. This vdWH can enhance the performance of MoSe2 MLs in optoelectronic devices and expand the application of MoSi2N4 MLs.
JOURNAL OF MATERIALS CHEMISTRY C
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Lei Kang et al.
Summary: The study found that differences in structural details of MoSi2N4 may lead to differences in second harmonic generation intensity and response to strain. Second harmonic generation can be used as a simple technique to identify the structural details of this system. Additionally, the study investigated the strain-regulation mechanism of MoSi2N4 derivatives, including anomalous SHG responses under strain for certain derivatives, which differ from other known 2D materials. These findings hold significance for nonlinear optics and optoelectronics research in this novel 2D material system.
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