An Experimental Study of the Surface Roughness of SiCp/Al with Ultrasonic Vibration-Assisted Grinding

Due to the differences in mechanical properties of Al and SiC particles, the problems of SiC particle pullout and high surface roughness will occur in the processing of SiCp/Al composites. However, the ultrasonic vibration-assisted grinding of SiCp/Al can effectively decrease the appearance of such problems. A comparative experimental study of the ultrasonic vibration-assisted and ordinary grinding of SiCp/Al is conducted. First, the effect of ultrasonic amplitude on the removal form of SiC is summarized by observing the surface morphology of the sample. Then, the primary reasons for the pullout of SiC particles and high surface roughness in SiCp/Al processing are analyzed. The variation law of the surface roughness of SiCp/Al under different ultrasonic amplitudes and grinding parameters is summarized through a single-factor experiment. The results show that ultrasonic vibration-assisted grinding is beneficial for reducing the surface roughness of SiCp/Al. When grinding linear speed of grinding wheel v(s) increases from 2.512 m/s to 7.536 m/s, surface roughness R-a decreases from 0.25 mu m to 0.16 mu m. when feed rate v(w) increases from 100 mm/min to 1700 mm/min, surface roughness R-a increases from 0.13 mu m to 0.20 mu m. When grinding depth a(p) increases from 0.01 mm to 0.05 mm, surface roughness R-a increases from 0.13 mu m to 0.19 mu m. When ultrasonic amplitude A is increased from 0 mu m to 2 mu m, surface roughness R-a decreases from 0.26 mu m to 0.15 mu m. When ultrasonic amplitude A is increased from 2 mu m to 4.4 mu m, surface roughness R-a increases from 0.15 mu m to 0.18 mu m.

Automated summary

This study conducted a comparative experimental study of ultrasonic vibration-assisted and ordinary grinding of SiCp/Al. The results showed that ultrasonic vibration-assisted grinding can effectively reduce the surface roughness of SiCp/Al and alleviate the problems of SiC particle pullout. The study also analyzed the primary reasons for SiC particle pullout and high surface roughness in SiCp/Al processing.