Recent Advances of Doping and Surface Modifying Carbon Nitride with Characterization Techniques

As a non-metallic organic semiconductor photocatalyst, graphitic carbon nitride (g-C3N4, CN) has become a research hotspot due to its excellent performance in organic degradation, CO2 reduction and water splitting to produce hydrogen. However, the high recombination rate of electron-hole pairs, low specific surface area and weak light absorption of bulk CN synthesized by the traditional one-step thermal polymerization method seriously restrict its photocatalytic performance and practical application. To enhance the photocatalytic performance of CN, doping and surface modification strategies are usually employed to tune the band gap of carbon nitride and improve the separation of carriers. In this paper, the research progress of different methods to modify CN in recent years is introduced, and the mechanisms of improving the photocatalytic performance are mainly analyzed. Typical modification methods are mainly divided into metal doping, non-metal doping, co-doping and surface-functionalized modification. Some characterization methods that can analyze the doping state and surface modification are also discussed as examples. Finally, the difficulties that need to be addressed through modified CN photocatalysts and the directions for future research are pointed out.

Automated summary

This paper introduces the research progress of modifying graphitic carbon nitride (CN) in recent years and mainly analyzes the mechanisms of improving photocatalytic performance using different methods. Doping and surface modification strategies can be employed to tune the band gap of carbon nitride and improve carrier separation. Typical modification methods include metal doping, non-metal doping, co-doping, and surface-functionalized modification.