4.5 Review

From Top to Down-Recent Advances in Etching of 2D Materials

Journal

ADVANCED MATERIALS INTERFACES
Volume 9, Issue 31, Pages -

Publisher

WILEY
DOI: 10.1002/admi.202201334

Keywords

2D materials; chemical vapor deposition; etching; graphene

Funding

  1. National Key R&D Program of China [2021YFA0717900]
  2. Natural Science Foundation of China [52002267]

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This article provides an overview of etching techniques for 2D materials and their applications in electronic device manufacturing, growth mechanism research, and grain boundary visualization. It introduces commonly used etching techniques and etching modes, and elucidates the etching mechanism. Additionally, it discusses key issues in the etching process and envisions future developments.
Etching, considered as the reverse process of growth, has drawn intensive interests in the past decades. Rather from offering building blocks for formation of materials, etching is served as removing basic units from the matrix. Generally, etching plays a critical role in three aspects: first, it can serve as direct top-down method to precisely make designed patterns for electronic devices. Second, it can offer an indirect way to probe the detailed growth mechanism of 2D materials, enhancing understanding of growth process. Finally, it can be an efficient and facile way to visualize grain boundaries. Herein, several commonly used etching techniques for 2D materials are presented of which chemical vapor deposition etching has attracted the most intensive attentions. Thereafter, the typical etching modes of 2D materials are demonstrated, wherein linear etching, anisotropic etching, and fractal etching are comprehensively exhibited, respectively. Furthermore, the etching mechanism of 2D materials is elucidated, thereby offering a guideline for probing their in-depth etching dynamics and kinetics. Finally, relevant concerns regarding uniformity and reproducibility within etching process are discussed and the expected future is envisaged.

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