Dopant-Induced Giant Photoluminescence of Monolayer MoS2 by Chemical Vapor Transport (Adv. Mater. Interfaces 25/2022)

Photoluminescence of Monolayer MoS2 The Ti-doped MoS2 monolayers with ultra-high photoluminescence (PL) intensity are successfully synthesized through chemical vapor transport as reported in article number 2200431 by Zhao Ma, Hailong Qiu, and co-workers. The PL intensity from the Ti-doped MoS2 is 85-fold stronger than that from the pristine MoS2. The giant PL enhancement is attributed to dopant-induced O-Ti-S units and improved interaction between the monolayer and the mica substrate, increasing the photoluminescence quantum yield and suppressing the non-radiative recombination.

Automated summary

In this study, Ti-doped MoS2 monolayers with ultra-high photoluminescence intensity were successfully synthesized. The photoluminescence intensity of the Ti-doped MoS2 was found to be 85 times stronger than that of the pristine MoS2. This significant enhancement can be attributed to the dopant-induced O-Ti-S units and improved interaction between the monolayer and the mica substrate.