A Monolithic 3-Dimensional Static Random Access Memory Containing a Feedback Field Effect Transistor

A monolithic three-dimensional integrated static random access memory containing a feedback field effect transistor (M3D-FBFET-SRAM) was proposed. The M3D-FBFET-SRAM cell consists of one metal oxide semiconductor field effect transistor (MOSFET) and one FBFET, and each transistor is located on the top tier and one on the bottom tier in a monolithic 3D integration, respectively. The electrical characteristics and operation of the NFBFET in the M3D-FBFET-SRAM cell were investigated using a TCAD simulator. For SRAM operation, the optimum doping profile of the NFBFET was used for non-turn-off characteristics. For the M3D-FBFET-SRAM cell, the operation of the SRAM and electrical coupling occurring between the top and bottom tier transistor were investigated. As the thickness of interlayer dielectric decreases, the reading 'ON' current decreases. To prevent performance degradation, two ways to compensate for current level were suggested.

Automated summary

A monolithic three-dimensional integrated static random access memory with a feedback field effect transistor (M3D-FBFET-SRAM) was proposed. The electrical characteristics and operation of the FBFET were investigated, along with the electrical coupling between the top and bottom tier transistors. Non-turn-off characteristics were achieved by optimizing the doping profile, and two methods for compensating current level were suggested.