TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode

Article Engineering, Electrical & Electronic

Single-Event Burnout Hardening 4H-SiC UMOSFET Structure

Junghun Kim et al.

Summary: This paper proposes an improved 4H-SiC UMOSFET structure and compares it with the conventional UMOSFET structure through numerical technology computer-aided design simulations. Results show that the proposed structure has a higher SEB threshold voltage, providing better SEB performance.

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY (2022)

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Article Chemistry, Analytical

Effect of the Oxidation Process on Carrier Lifetime and on SF Defects of 4H SiC Thick Epilayer for Detection Applications

Alessandro Meli et al.

Summary: The aim of this study was to characterize a thick 4H SiC epitaxial layer and compare the results before and after a thermal oxidation process. The oxidation process was found to improve the carrier lifetime and diffusion length of the epitaxial layer.

MICROMACHINES (2022)

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Article Chemistry, Analytical

Influence of Radiation-Induced Displacement Defect in 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors

Gyeongyeop Lee et al.

Summary: The effect of displacement defect on SiC MOSFETs due to radiation was investigated using TCAD simulation. It was found that the deepest defect energy level caused considerable degradation, affecting the on-current and on-resistance significantly, while having negligible impact on power loss in a double-pulse switching test.

MICROMACHINES (2022)

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Article Engineering, Electrical & Electronic

A Multiepi Superjunction MOSFET With a Lightly Doped MOS-Channel Diode for Improving Reverse Recovery

Mingmin Huang et al.

Summary: By introducing a lightly-doped MCD and forming the p-pillar using the ME process, the SJ MOSFET can achieve improved performance with reduced Qrr and smaller reverse recovery oscillations.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

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Article Engineering, Electrical & Electronic

Numerical Study of SiC MOSFET With Integrated n-/n-Type Poly-Si/SiC Heterojunction Freewheeling Diode

Hengyu Yu et al.

Summary: A new 1200 V SiC MOSFET structure with an integrated heterojunction diode has been proposed, offering a lower turn-on knee voltage and reduced gate charge compared to conventional MOSFETs. By optimizing device parameters and structure design, the breakdown voltage is improved while maintaining high performance.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

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Article Engineering, Electrical & Electronic

A Novel Split-Gate-Trench MOSFET Integrated With Normal Gate and Built-In Channel Diode

Xinyu Li et al.

Summary: The novel split-gate-trench MOSFET integrated with normal gate and built-in channel diode shows superior performance compared to conventional devices, with improvements in key metrics and uniform conduction current distribution, making it suitable for high-power and high-frequency applications.

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2021)

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Article Engineering, Electrical & Electronic