Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers

Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via direct epitaxial growth is a promising solution for on-chip light sources. Recent developments have demonstrated superior device reliability in blanket hetero-epitaxy of III-V devices on Si at elevated temperatures. Yet, thick, defect management epi designs prevent vertical light coupling from the gain region to the Si-on-Insulator waveguides. Here, we demonstrate the first electrically pumped QD lasers grown by molecular beam epitaxy on a 300 mm patterned (001) Si wafer with a butt-coupled configuration. Unique growth and fabrication challenges imposed by the template architecture have been resolved, contributing to continuous wave lasing to 60 degrees C and a maximum double-side output power of 126.6 mW at 20 degrees C with a double-side wall-plug efficiency of 8.6%. The potential for robust on-chip laser operation and efficient low-loss light coupling to Si photonic circuits makes this heteroepitaxial integration platform on Si promising for scalable and low-cost mass production.

Automated summary

The monolithic integration of quantum dot gain materials onto Si photonic platforms is a promising solution for on-chip light sources. In this study, the researchers successfully grew electrically pumped quantum dot lasers on patterned Si wafers, overcoming the challenges posed by the template architecture and achieving good laser performance and efficient light coupling.