Journal
ADVANCED MATERIALS
Volume 27, Issue 40, Pages 6096-6103Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201503540
Keywords
GaAs; growth mechanisms; nanowires; polarity; surface energy
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Funding
- Australian Research Council
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Controllable axial switching of polarity in GaAs nanowires with minimal tapering and perfect twin-free ZB structure based on the fundamental understanding of nanowire growth and kinking mechanism is presented. The polarity of the bottom segment is confirmed to be (111) A by atomically resolved scanning transmission electron microscopy.
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