Energy-storage performance and pyroelectric energy harvesting effect of PNZST antiferroelectric thin films

In this work, (111)-oriented (Pb0.99Nb0.02)(Zr, Sn, Ti)(0.98)O-3 (PNZST) antiferroelectric thin films, which located in the tetragonal phase region (PNZST(T)) and the orthorhombic phase region (PNZST(O)), respectively, were successfully fabricated on platinum-buffered silicon substrates by radio-frequency magnetron sputtering technique. The microstructure, dielectric properties, electric field induced phase transition, associated with the energy-storage performance and pyroelectric energy harvesting behavior (by Olsen cycle) were studied systemically. The PNZST(T) thin film showed a diffused field-induced antiferroelectric- ferroelectric (AFE-FE) phase switching with a slim double hysteresis loop, while the PNZST(O) film demonstrated an AFE-FE phase switching with a square double hysteresis loop. A maximum recoverable energystorage density of 16.4 and 12.4 J/cm(3) were obtained in the PNZST(T) and PNZST(O) film, respectively. Moreover, a huge harvested energy density per cycle of W = 7.35 and 5.35 J/cm(3) was also predicted in the PNZST(T) and PNZST(O) film at 1 kHz, respectively. The good energy-storage performance and giant thermal-electrical energy harvesting effect of the PNZST antiferroelectric thin films maybe make a great impact on the modern energy-storage technology and the thermal-electrical energy harvesting applications.