High-Performance Visible to Near-Infrared Broadband Bi2O2Se Nanoribbon Photodetectors

Owing to its suitable electronic bandgap, excellent air stability, and high carrier mobility at room temperature, low-dimensional bismuth oxyselenide (Bi2O2Se) has become attractive in the context of visible-near-infrared (VIS-NIR) detection. However, the high carrier concentration and bolometric effect of Bi2O2Se nanosheets are not conducive to reducing the dark current and improving the response speed, which hinders Bi2O2Se nanosheet-based photodetectors from achieving an optimal performance. In this study, a Bi2O2Se nanoribbon is controllably synthesized on a fluorophlogopite substrate by means of the chemical vapor deposition approach. Through the use of a Bi2O2Se nanoribbon structure and the application of a Schottky barrier between the Bi2O2Se and Au electrodes, a fast response and low noise photodetector is achieved. More specifically, the response times are 2.1 and 313 mu s at 650 and 1550 nm, respectively, and the corresponding optimal detectivities are 3.28 x 10(13) and 8.07 x 10(9) Jones. Furthermore, the device reaches a -3 dB bandwidth of 81 kHz and exhibits a responsivity of 3.2 x 10(5) A W-1 at 650 nm under a bias of 5 V. This study provides new opportunities for the application of high-performance VIS-NIR photodetectors.

Automated summary

This study successfully synthesized a Bi2O2Se nanoribbon and achieved a fast response and low noise photodetector by applying a Schottky barrier between the Bi2O2Se and Au electrodes. The device has low dark current and fast response time, providing new opportunities for high-performance VIS-NIR photodetectors.