Related references
Note: Only part of the references are listed.Enhancement in Analog/RF and Power Performance of Underlapped Dual-Gate GaN-Based MOSHEMTs with Quaternary InAlGaN Barrier of Varying Widths
Hrit Mukherjee et al.
JOURNAL OF ELECTRONIC MATERIALS (2022)
RF/Analog and Linearity Performance Evaluation of Lattice-matched Ultra-thin AlGaN/GaN Gate Recessed MOSHEMT with Silicon Substrate
Abdul Naim Khan et al.
SILICON (2022)
Digital Performance Assessment of the Dual-Material Gate GaAs/InAs/Ge Junctionless TFET
Mahdi Vadizadeh
IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)
Impact of effective mass changes with mole-fraction on the analog/radio frequency benchmarking parameters in junctionless GaxIn1-xAs/GaAs field-effect transistor
Mahdi Vadizadeh et al.
INTERNATIONAL JOURNAL OF MODERN PHYSICS B (2021)
Influence of Graded AlGaN sub-channel over the DC and Breakdown characteristics of a T-gated AlGaN/GaN/AlInN MOS-HEMT
V Sandeep et al.
SUPERLATTICES AND MICROSTRUCTURES (2021)
Impact of channel doping engineering on the high-frequency noise performance of junctionless In0.3Ga0.7As/GaAs FET: A numerical simulation study
Mohammad Fallahnejad et al.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES (2020)
Impact of AlInN Back-Barrier Over AlGaN/GaN MOS-HEMT With HfO2 Dielectric Using Cubic Spline Interpolation Technique
V. Sandeep et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)
Single and double-gate based AlGaN/GaN MOS-HEMTs for the design of low-noise amplifiers: a comparative study
Deepak Kumar Panda et al.
IET CIRCUITS DEVICES & SYSTEMS (2020)
Design and analysis of 10 nm T-gate enhancement-mode MOS-HEMT for high power microwave applications
Ouati Zine-eddine et al.
JOURNAL OF SCIENCE-ADVANCED MATERIALS AND DEVICES (2019)
Characteristics of GaAs/GaSb tunnel field-effect transistors without doping junctions: numerical studies
Mahdi Vadizadeh
JOURNAL OF COMPUTATIONAL ELECTRONICS (2018)
Highly Linear High-Frequency Low-Noise Amplifier Design at ISM Band
Farhad Bahadori-Jahromi et al.
WIRELESS PERSONAL COMMUNICATIONS (2018)
Performance improvement of junctionless field effect transistors using p-GaAs/AlGaAs heterostructure
E. Bajelan et al.
SUPERLATTICES AND MICROSTRUCTURES (2017)
Oxide interfacial charge engineering towards normally-off AlN/GaN MOSHEMT
R. Swain et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2016)
Impact of oxide thickness on gate capacitance - Modelling and comparative analysis of GaN-based MOSHEMTs
Kanjalochan Jena et al.
PRAMANA-JOURNAL OF PHYSICS (2015)
Analysis of the RF and noise performance of junctionless MOSFETs using Monte Carlo simulation
Yongbo Chen et al.
INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS (2014)
Composite HfO2/Al2O3-dielectric AlGaAs/InGaAs MOS-HEMTs by using RF sputtering/ozone water oxidation
Ching-Sung Lee et al.
SUPERLATTICES AND MICROSTRUCTURES (2014)
GaN-Based Robust Low-Noise Amplifiers
Sergio Colangeli et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2013)
Compact Charge-Based Physical Models for Current and Capacitances in AlGaN/GaN HEMTs
Fetene Mulugeta Yigletu et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2013)
InP-HEMT X-band Low-Noise Amplifier With Ultralow 0.6-mW Power Consumption
Liang Liu et al.
IEEE ELECTRON DEVICE LETTERS (2012)
AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistor With Liquid-Phase-Deposited Barium-Doped TiO2 as a Gate Dielectric
Chih-Chun Hu et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2012)
Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth
Sansaptak Dasgupta et al.
APPLIED PHYSICS LETTERS (2010)
Initialization for robust inverse synthesis of phase-shifting masks in optical projection lithography
Stanley H. Chan et al.
OPTICS EXPRESS (2008)
Enhancement-mode Si3N4/AlGaN/GaN MISHFETs
Ruonan Wang et al.
IEEE ELECTRON DEVICE LETTERS (2006)
A low-power, X-band SiGe HBT low-noise amplifier for near-space radar applications
Wei-Min Lance Kuo et al.
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS (2006)
High transconductance enhancement-mode AlGaN/GaN HEMTs on SiC substrate
V Kumar et al.
ELECTRONICS LETTERS (2003)
Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
O Ambacher et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2002)
Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate
X Hu et al.
ELECTRONICS LETTERS (2000)