4.7 Review

Recent Progress on Flexible Room-Temperature Gas Sensors Based on Metal Oxide Semiconductor

Journal

NANO-MICRO LETTERS
Volume 14, Issue 1, Pages -

Publisher

SHANGHAI JIAO TONG UNIV PRESS
DOI: 10.1007/s40820-022-00956-9

Keywords

Metal oxide semiconductor; Flexible gas sensor; Room temperature; Nanomaterials

Funding

  1. National Key R&D Program of China [2020YFB2008604, 2021YFB3202500]
  2. National Natural Science Foundation of China [61874034, 51861135105]
  3. International Science and Technology Cooperation Program of Shanghai Science and Technology Innovation Action Plan [21520713300]
  4. Fudan University-CIOMP Joint Fund [E02632Y7H0]

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This article presents the recent research progress of metal oxide semiconductor-based room-temperature gas sensors and discusses the influence of various modified materials on the performance of gas sensors. The effect of light illumination on gas sensing performance and the applications and future perspectives of room-temperature gas sensors are also discussed.
With the rapid development of the Internet of Things, there is a great demand for portable gas sensors. Metal oxide semiconductors (MOS) are one of the most traditional and well-studied gas sensing materials and have been widely used to prepare various commercial gas sensors. However, it is limited by high operating temperature. The current research works are directed towards fabricating high-performance flexible room-temperature (FRT) gas sensors, which are effective in simplifying the structure of MOS-based sensors, reducing power consumption, and expanding the application of portable devices. This article presents the recent research progress of MOS-based FRT gas sensors in terms of sensing mechanism, performance, flexibility characteristics, and applications. This review comprehensively summarizes and discusses five types of MOS-based FRT gas sensors, including pristine MOS, noble metal nanoparticles modified MOS, organic polymers modified MOS, carbon-based materials (carbon nanotubes and graphene derivatives) modified MOS, and two-dimensional transition metal dichalcogenides materials modified MOS. The effect of light-illuminated to improve gas sensing performance is further discussed. Furthermore, the applications and future perspectives of FRT gas sensors are also discussed.

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