Characterization of quaternary AlInGaN films obtained by incorporating Al into InGaN film with the RF reactive magnetron sputtering technology

Al incorporation into the InGaN films has been successfully attained from the cermet targets under the working temperature of 200 degrees C and output power of 120 W by the RF sputtering technique. We used energy dispersive spectroscopy to analyze the compositions of the AlxIny Ga1-x-yN, and X-ray diffractometry and atomic force microscopy had been taken to obtain the crystal structure and growth characteristics of the AlInGaN films. Composition-affected electrical properties of the films had been discussed by the Hall measurement, which also identified the incorporation of Al into the InGaN film in this work. A simple n-AlInGaN/p-Si diode is designed to illustrate the potential application of the sputtered AlInGaN in an electrical device.