Journal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume 27, Issue 11, Pages 11331-11338Publisher
SPRINGER
DOI: 10.1007/s10854-016-5257-z
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Funding
- National Natural Science Foundation of China [51205274]
- Shanxi Scholarship Council of China [2013-035]
- Scientific Activities of Selected Returned Overseas Professionals in Shanxi Province [[2014]95]
- Shanxi Province Science Foundation for Youths [2013021017-2]
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In this paper, the pure In2O3 and Pd-doped In2O3 (0.5, 1.0, 2.0 and 4.0 mol%) flower-like spherical microstructures have been synthesized by a hydrothermal method. The crystal structure and surface morphology of as-prepared samples were characterized by X-ray diffraction and scanning electron microscopy. The gas sensing experiments were carried out on all the as-prepared gas sensors to hydrogen gas, and the measured results demonstrated that the Pd-doped In2O3 gas sensors exhibit enhanced gas sensing performance under the optimal working temperature of 210 A degrees C. Especially, the 1.0 mol% Pd-doped In2O3 sensor shows the highest response to 100 ppm hydrogen gas at 210 A degrees C, which was almost two times higher than that of pure one. Furthermore, the 1.0 mol% Pd-doped In2O3 gas sensor also shows fast response/recovery time about 4 and 7 s, respectively. Finally, the gas sensing mechanism was also discussed on the pure and Pd-doped In2O3 gas sensors.
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