Fabrication, analysis and characterization of Cu2Zn1-x Cd x SnS4 quinternary alloy nanostructures deposited on GaN

The Cu2Zn1-x Cd (x) SnS4 quinternary alloy nanostructures with different Cd concentrations were prepared using spin coating technique on GaN substrate. The structural properties of Cu2Zn1-x Cd (x) SnS4/GaN were investigated by X-ray diffraction (XRD) and field emission-scanning electron microscope. XRD studies indicated that kesterite phase of Cu2ZnSnS4 and stannite phase of Cu2CdSnS4 were formed. The optical properties were studied through photoluminescence technique, and indicated that the band gap shifted as Cd concentration increases from 1.75 eV in Cu2ZnSnS4 to 1.65 eV in Cu2CdSnS4. The electrical characterization of the Ag/n-GaN/Cu2Zn1-x Cd (x) SnS4/Ag diode through current to voltage (I-V) characterization showed the highest photoresponse of (value if any) at Cu2Zn0.4Cd0.6SnS4 composition.