Journal
MATERIALS
Volume 15, Issue 20, Pages -Publisher
MDPI
DOI: 10.3390/ma15207077
Keywords
silicon nanowires; electron microscopy; phase transformation; bending; semiconductors
Categories
Funding
- National Key Research and Development Program of China [2018YFB2200500]
- National Natural Science Foundation of China [11975176, 61904146]
- Key Research and Development Program of Shaanxi Province [2020KW-011, 2022GY-012]
- Natural Science Basic Research Plan in Shaanxi Province of China [2021JQ-658, 2021JM-442]
- Fundamental Research Funds of Shaanxi Key Laboratory of Artificially-Structured Functional Materials and Devices [AFMD-KFJJ-21207]
- Shaanxi Provincial Education Department [16JK1319]
- Science and Technology Plan Project of Xi'an [2021XJZZ0009, 2020KJRC0026]
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In this study, transmission electron microscopy was used to analyze the shape and internal strain of bent silicon nanowires prepared by asymmetric electron-beam evaporation. The results showed that asymmetric deposition of chromium led to the formation of nanosized amorphous silicon domains, and the non-crystallinity of the nanowires could be controlled by the bending radius.
Controlling the shape and internal strain of nanowires (NWs) is critical for their safe and reliable use and for the exploration of novel functionalities of nanodevices. In this work, transmission electron microscopy was employed to examine bent Si NWs prepared by asymmetric electron-beam evaporation. The asymmetric deposition of Cr caused the formation of nanosized amorphous-Si domains; the non-crystallinity of the Si NWs was controlled by the bending radius. No other intermediate crystalline phase was present during the crystalline-to-amorphous transition, indicating a direct phase transition from the original crystalline phase to the amorphous phase. Moreover, amorphous microstructures caused by compressive stress, such as amorphous Cr domains and boxes, were also observed in the asymmetric Cr layer used to induce bending, and the local non-crystallinity of Cr was lower than that of Si under the same bending radius.
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