Investigation of the RF Sputtering Process and the Properties of Deposited Silicon Oxynitride Layers under Varying Reactive Gas Conditions

In a single process run, an amorphous silicon oxynitride layer was grown, which includes the entire transition from oxide to nitride. The variation of the optical properties and the thickness of the layer was characterized by Spectroscopic Ellipsometry (SE) measurements, while the elemental composition was investigated by Energy Dispersive Spectroscopy (EDS). It was revealed that the refractive index of the layer at 632.8 nm is tunable in the 1.48-1.89 range by varying the oxygen partial pressure in the chamber. From the data of the composition of the layer, the typical physical parameters of the process were determined by applying the Berg model valid for reactive sputtering. In our modelling, a new approach was introduced, where the metallic Si target sputtered with a uniform nitrogen and variable oxygen gas flow was considered as an oxygen gas-sputtered SiN target. The layer growth method used in the present work and the revealed correlations between sputtering parameters, layer composition and refractive index, enable both the achievement of the desired optical properties of silicon oxynitride layers and the production of thin films with gradient refractive index for technology applications.

Automated summary

In this study, an amorphous silicon oxynitride layer was grown in a single process run, and its optical properties, thickness, and elemental composition were characterized. It was found that the refractive index of the layer can be tuned by varying the oxygen partial pressure. By considering the metallic Si target as an oxygen gas-sputtered SiN target and applying the Berg model, the typical physical parameters of the process were determined.