Journal
CARBON
Volume 91, Issue -, Pages 38-44Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.carbon.2015.04.031
Keywords
-
Funding
- NSFC [51422201, 51172041, 51372035, 61404026]
- NCET Program [11-0615]
- 973 Program [2012CB933703]
- 111 project [B13013]
- Fund from Jilin Province [20121802, 201201061, 20140520106JH]
- Higher Education Doctoral Program [20130043110004]
Ask authors/readers for more resources
Coexistence of nonvolatile and volatile resistive switching behaviors was demonstrated in Cu/amorphous carbon/Pt sandwich-structure memory devices by adjusting compliance currents (CCs) to control the size of Cu conductive filament (CF). It was observed that the retention time of the volatile switching strongly depends on the CF's size, and can be tuned in a wide range from hundreds of milliseconds to tens of seconds. When the nanoscale CF contains only a small number of Cu atoms, the conductance quantization occurs in the relaxation process of resistance state. By quantitatively studying the dependence of relaxation time on CF's size and temperature, the volatile behavior can be well understood within the framework of the Rayleigh instability, where the Cu-CF spontaneously dissolves to minimize the surface energy. The observed nonvolatile/volatile behaviors, as well as the spontaneous relaxation effect, bear many resemblances to the long-term/short-term plasticity of biological synapses, and thus can be fully utilized to develop artificial synaptic devices. (C) 2015 Elsevier Ltd. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available