Mixed Ionic and Electronic Conduction in TeO2-ZnO-V2O5 Glasses towards Good Dielectric Features

The melt-quenching technique was used to synthesize tellurite glasses of the chemical composition 80TeO(2)-(20-x) ZnO-xV(2)O(5). X-ray diffraction (XRD) patterns indicate the amorphous nature of the prepared glasses. Raman and FTIR measurements demonstrate a progressive substitution of the Te-O-Te linkages by the Te-O-V bridges and the formation of VO4 and VO5 units by a change of the vanadium coordination due to the higher number of oxygens incorporated by further addition of V2O5. The AC conductivity was investigated in the frequency range of 40 Hz to 10(7) Hz between 473 K to 573 K. A good coherence of the AC conductivity was found using a model correlating the barrier hopping (CPH) and the dominant conduction process changes from ionic to polaronic with the addition of V2O5. The dielectric constant exhibits high values in the range of lower and medium frequencies. Both variations of the electric modulus and the dielectric loss parameters with frequency and temperature showed a relaxation character mainly assigned to the vanadate phases. The electric modulus displays a non-Debye dielectric dispersion and a relaxation process. The present results open the door to future zinc-tellurite glasses-doped vanadium exploitation as a potential electrolyte-based material for solid-state batteries.

Automated summary

The melt-quenching technique was used to synthesize tellurite glasses doped with vanadium. The addition of V2O5 changed the glass structure, as evidenced by Raman and FTIR measurements. The AC conductivity showed coherence and the dielectric constant exhibited high values in the lower and medium frequency range. The electric modulus and dielectric loss parameters were mainly related to the vanadate phases.