Plasmon-Induced Enhanced Light Emission and Ultrafast Carrier Dynamics in a Tunable Molybdenum Disulfide-Gallium Nitride Heterostructure

The effect of localized plasmon on the photoemission and absorption in hybrid molybdenum disulfide-Gallium nitride (MoS2-GaN) heterostructure has been studied. Localized plasmon induced by platinum nanoparticles was resonantly coupled to the bandedge states of GaN to enhance the UV emission from the hybrid semiconductor system. The presence of the platinum nanoparticles also increases the effective absorption and the transient gain of the excitonic absorption in MoS2. Localized plasmons were also resonantly coupled to the defect states of GaN and the exciton states using gold nanoparticles. The transfer of hot carriers from Au plasmons to the conduction band of MoS2 and the trapping of excited carriers in MoS2 within GaN defects results in transient plasmon-induced transparency at similar to 1.28 ps. Selective optical excitation of the specific resonances in the presence of the localized plasmons can be used to tune the absorption or emission properties of this layered 2D-3D semiconductor material system.

Automated summary

The effect of localized plasmon on the photoemission and absorption in the MoS2-GaN hybrid heterostructure was studied. The resonant coupling of localized plasmons induced by platinum and gold nanoparticles enhanced the UV emission and absorption efficiency in the semiconductor system. Selective optical excitation of specific resonances can tune the absorption and emission properties of this layered 2D-3D semiconductor material system.