Theoretical study on transport properties of group-III doped SiCNRs

Silicon carbide nanoribbons (SiCNRs) have a broad application in the field of new-generation micro-nanoelectronic devices. In this paper, first-principles data are used to simulate the effect of the substitution of Si or C sites by group-III elements on the transport properties of zigzag SiCNRs (ZSiCNRs). The results show that the conductivity and carrier concentration of group-III doped ZSiCNRs increase with the increase in temperature, while the change of mobility with temperature is opposite. At room temperature, the conductivity of ZSiCNRs changed little when the Si site was replaced, while the conductivity changed greatly when the C site was replaced. Further studies show that the carrier concentration of group-III doped ZSiCNRs mainly depends on the shallow impurity level. The mobility is mainly determined by optical phonon scattering and decreases with increasing temperature.

Automated summary

This paper uses first-principles data to study the effect of the substitution of Si or C sites by group-III elements on the transport properties of ZSiCNRs. The results show that the conductivity and carrier concentration of group-III doped ZSiCNRs increase with increasing temperature, while the mobility decreases.