4.5 Article

A novel stochastic photo-thermoelasticity model according to a diffusion interaction processes of excited semiconductor medium

Journal

EUROPEAN PHYSICAL JOURNAL PLUS
Volume 137, Issue 8, Pages -

Publisher

SPRINGER HEIDELBERG
DOI: 10.1140/epjp/s13360-022-03185-6

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This study investigates a novel technique under the influence of stochastic heating caused by the thermal effect of photothermal theory, and obtains deterministic physical quantities using stochastic calculus. Comparisons and discussions are made on the distributions of the main physical quantities along different sample paths.
A novel technique under the impact of stochastic heating due to the thermal effect of photothermal theory is investigated. Realistically, stochastic processes are taken on the boundary of the semiconductor medium. The interactions between optical, thermal, and mechanical waves in a half-space of the medium are studied according to the photo-thermoelasticity theory. The governing equations are described in one-dimensional elastic-electronic deformation. Laplace transforms with short-time approximation are used to analyze the main physical fields. To study the problem more realistically, some conditions are taken as random with white noise on the free surface of the elastic medium. The deterministic physical quantities are obtained with a stochastic calculus when a numerical inversion of the Laplace transform is applied. The silicon material is utilized to make the stochastic numerical simulation. The comparisons are carried out between the distributions of deterministic and stochastic (statistically, the mean and variance) the main physical quantities along different sample paths graphically and discussed.

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