Journal
ADVANCED ENERGY MATERIALS
Volume 12, Issue 46, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/aenm.202202395
Keywords
carrier dynamics; heterointerfaces; ionic anchoring; nano-MXenes; perovskite solar cells
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Funding
- National Key R&D Program for International Cooperation [2021YFE0115100]
- National Natural Science Foundation of China [52172101, 51972272, 51872240, 52202115]
- Research Fund of the State Key Laboratory of Solidification Processing (NPU), China [2022-BJ-05]
- Shaanxi Province Key Research and Development Program [2022KWZ-04, 2021ZDLGY14-08]
- Fundamental Research Funds for the Central Universities [3102019JC005, G2022KY0604]
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This study pioneers the rational design of interfacial ionic-bonding to effectively retard the lattice instability in FA-based perovskites. The robust heterointerface between perovskite and nano-MXenes results in modulating defects and reducing charge transfer barrier, leading to improved efficiency and stability of the solar cells.
Formamidinium (FA)-based perovskite promises high power conversion efficiency in photovoltaics while it faces awkward spontaneous yellow phase transition even at ambient conditions. This has spurred intensive efforts which leave a formidable challenge on robust anchoring of the soft perovskite lattice. Present work pioneers the rational design of interfacial ionic-bonding between halogen-terminated nano-MXenes and perovskite for effective retarding of the lattice instability in FA-based perovskites. The robust heterointerface between perovskite and nano-MXenes results also in effectively modulating the deep-energy-level defects, lowering the interfacial charge transfer barrier, and tuning the work function of perovskite films. Benefiting from these merits, unencapsulated FA-based perovskite solar cells after the ionic stabilization (champion efficiency up to 24.17%), maintain over 90% of their initial efficiency after operation at maximum power point under continuous illumination for 1000 h, and retain more than 85% of their initial efficiency even after annealing for 1000 h at 85 degrees C in inert atmosphere.
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