Ambipolar blend-based organic electrochemical transistors and inverters

Ambipolar organic electrochemical transistors simplify bioelectronics circuitry but are challenging due to complicated material design and synthesis. Here, the authors demonstrate that p- and n-type blends offer a simple and tuneable approach for the fabrication of ambipolar devices and circuits. CMOS-like circuits in bioelectronics translate biological to electronic signals using organic electrochemical transistors (OECTs) based on organic mixed ionic-electronic conductors (OMIECs). Ambipolar OECTs can reduce the complexity of circuit fabrication, and in bioelectronics have the major advantage of detecting both cations and anions in one device, which further expands the prospects for diagnosis and sensing. Ambipolar OMIECs however, are scarce, limited by intricate materials design and complex synthesis. Here we demonstrate that judicious selection of p- and n-type materials for blend-based OMIECs offers a simple and tunable approach for the fabrication of ambipolar OECTs and corresponding circuits. These OECTs show high transconductance and excellent stability over multiple alternating polarity cycles, with ON/OFF ratios exceeding 10(3) and high gains in corresponding inverters. This work presents a simple and versatile new paradigm for the fabrication of ambipolar OMIECs and circuits with little constraints on materials design and synthesis and numerous possibilities for tunability and optimization towards higher performing bioelectronic applications.

Automated summary

This study demonstrates a simple and tunable approach for fabricating ambipolar organic electrochemical transistors (OECTs) and circuits by judicious selection of p- and n-type materials for blend-based organic mixed ionic-electronic conductors (OMIECs). These ambipolar OECTs exhibit high transconductance, excellent stability, and high gains, providing a new paradigm for the fabrication of ambipolar OMIECs and circuits with little constraints on materials design and synthesis.